TLP181(GB-TPR,F,T) datasheet

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Маркировка

TLP181(GB-TPR,F,T)
Производитель

TOSHIBA Semiconductor
Описание

TOSHIBA Semiconductor TLP181(GB-TPR,F,T) Collector Current (dc) (max): 50mA Collector-emitter Saturation Voltage: 0.4V Collector-emitter Voltage: 80V Current - Dc Forward (if): 50mA Current - Output / Channel: 50mA Current Transfer Ratio: 600% Current Transfer Ratio (max): 600% @ 5mA Current Transfer Ratio (min): 100% @ 5mA Forward Current: 50mA Forward Voltage: 1.3V Input Type: DC Isolation Voltage: 3750Vrms Lead Free Status / Rohs Status: Compliant Maximum Collector Current: 10 mA Maximum Collector Emitter Saturation Voltage: 0.4 V Maximum Collector Emitter Voltage: 80 V Maximum Fall Time: 3 us Maximum Forward Diode Voltage: 1.3 V Maximum Input Diode Current: 50 mA Maximum Operating Temperature: + 100 C Maximum Power Dissipation: 200 mW Maximum Reverse Diode Voltage: 5 V Maximum Rise Time: 2 us Minimum Operating Temperature: - 55 C Mounting: Surface Mount Mounting Type: Surface Mount Number Of Elements: 1 Number Of Channels: 1 Operating Temp Range: -25C to 85C Operating Temperature Classification: Commercial Output Device: Transistor Output Type: Transistor Package / Case: 4-SMD Package Type: MFSOP Pin Count: 4 Power Dissipation: 200mW Reverse Breakdown Voltage: 5V Series: - Vce Saturation (max): 400mV Voltage - Isolation: 3750Vrms Voltage - Output: 80V Other Names: TLP181(GB-TPR), TLP181GBFTR, TLP181GBTPR, TLP181GBTPRFT, TLP181GBTR
Количество страниц

9 шт.
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195,46 KB